NCE8295A mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =82V,ID =95A RDS(ON) < 8.0 mΩ @ VGS=10V
(Typ:6.6mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current.
General Features
* VDS =82V,ID =95A RDS(ON) < 8.0 mΩ @ VGS=10V
(Typ:6.6mΩ)
* High density cell design for ul.
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